A 28-GHz CMOS Power Amplifier with Ribbon Cell
Abstract
In this paper, we present a CMOS power amplifier with ribbon cells. As the frequency increases, the output impedance decreases due to parasitic capacitors, so an int- erstage inductor is inserted. The interstage inductor used in previous research has the problem of increasing the size of the chip. Ribbon cells use larger interstage inductors through mutual inductance. Therefore, a metal smaller than the desired inductor metal size can be used. This allows the chip size to be designed small. It also improves AM-PM distortion and IMD3. Operating at 28GHz and with a supply voltage of 2.4V, IMD3 -40dBc is 10dBm of linear output power and -30dBc is 12.3dBm of linear output power. and PAE are 19% and 25%. It has a saturated output power of 18.4dBm and achieves a gain of 11.6dB at P1dB of 16.4dBm.