Ka-band CMOS Power Amplifier with Self-Biasing-Resistor
Abstract
In this paper, a CMOS power amplifier using a self-biasing-resistor transistor for Ka-band is proposed. Generally, when designing a power amplifier with a cascode structure, a structure connecting the source and body of the transistor is used. This changes the intercascode voltage depending on the output of the common source stage, which changes the body voltage of the common gate stage, ultimately changing the I-V curve. Therefore, by inserting a large resistor between the body and the source, parasitic capacitors are used to split the RF swing in the body and compensate for voltage changes. As a result, AM-AM and IMD3 have been improved, and it has a linear output power of 13.1dBm and a linear PAE of 22.6% at a supply voltage of 2.4V.