Ka-band CMOS Power Amplifier with Self-Biasing-Resistor

Abstract

In this paper, a CMOS power amplifier using a Self-Biasing-Resist or transistor for Ka-band is proposed. Generally, when designing a power amplifier with a cascode structure, a structure connecting the source and body of the transistor is used. This changes the inter-cascode voltage depending on the output of the common-source stage, which changes the body voltage of the common-gate stage, ultimately changing the I-V curve. Therefore, by inserting a large resistor between the body and the source, parasitic capacitors are used to split the RF signal swing in the body and compensate for voltage changes. As a result, AM-AM and IMD3 have been improved, and it has a linear output power of 13.1dBm and a linear PAE of 22.6% at a supply voltage of 2.4V.