Fully Integrated Triple-Mode Ka-Band Power Amplifier with Vertical-Horizontal Combined Transformer for 5G NR Applications

DOI: https://doi.org/10.23075/jicas.2022.8.4.007
Keywords: 5G, 65-nm, CMOS, High Efficiency, Ka-band, Power Amplifier(PA), Power Combiner, Triple-mode control

Abstract

This paper presents a fully integrated triple-mode Ka-band power amplifier with a vertical-horizontal combined transformer for 5G NR applications, in 65 nm bulk CMOS process. With discrete power control using the proposed vertical-horizontal combined transformer, the triple-mode PA achieves enhanced efficiency performance in the power back-off region. The fully integrated triple-mode PA achieves 18.4-, 21.9-, and 23.5-dBm saturated output powers with 27.2, 34.9, and 41.5% peak PAEs in low power (LP), middle power (MP), and high power (HP) modes, respectively. The triple-mode PA can reduce the current consumption in LP the and MP modes.

Author Biographies

Geun Tae Kim, Pusan National University

Geun Tae Kim received the B.S. degree in Electrical Engineering from Pusan National University, Busan, Korea, in 2017, and is currently working toward M.S. degree in electrical engineering at Pusan National University, Busan, Korea. His interest includes mm-wave power amplifier design for mobile application.

Kyu Taek Oh, Pusan National University

Kyu Taek Oh received the B.S. degree in Electrical Engineering from Pusan National University, Busan, Korea, in 2017, and is currently working toward M.S. degree in electrical engineering at Pusan National University, Busan, Korea. His interests include mm-wave power amplifier design for mobile applications and DC-DC converters.

Hyun Jin Ahn, Qualcomm Inc.

Hyun Jin Ahn received the B.S. and the Ph.D. degrees in electrical engineering from Pusan National University, Busan, South Korea, in 2015 and 2021, respectively.

He was an Intern with Qualcomm Inc., San Diego, CA, USA, where he was involved in the development of power amplifier (PA) and passive circuits for 5G applications. Since 2022, he has been with Qualcomm Inc., San Diego, CA, USA, where he is involved in designing the PA and passive circuits for 5G applications. His interests include high-frequency power amplifier design for mobile applications and low power circuit design.

Ock Goo Lee, Pusan National University

Ock Goo Lee received the B.S. degree in electrical engineering from Sungkyunkwan University, Korea, in 2001, the M.S. degree in electrical engineering from the KAIST, Korea, in 2005, and the Ph.D. degree in electrical and computer engineering from the Georgia Institute of Technology, USA, in 2009.

Upon completion of the doctoral degree, he joined Qualcomm Inc., USA, as a Senior Engineer, where he was involved in the development of transmitters and integrated passive circuits on mobile applications. He is currently a faculty member with the Department of Electrical Engineering, Pusan National University, Korea. His research interests include high-frequency integrated circuits and system design for wireless communications.

Homepage : https://olee143.wixsite.com/wicspusan

Published
2022-10-01
How to Cite
Kim, G. T., Oh, K. T., Ahn, H. J., & Lee, O. G. (2022). Fully Integrated Triple-Mode Ka-Band Power Amplifier with Vertical-Horizontal Combined Transformer for 5G NR Applications. Journal of Integrated Circuits and Systems, 8(4). https://doi.org/10.23075/jicas.2022.8.4.007
Issue
Vol 8 No 4 (2022)
Section
Articles