Design Study of a 630-GHz Injection-Locked Oscillator Based on InP HBT Technology

Abstract

In this work, an injection-locked oscillator (ILO) has been designed in a 250-nm InP HBT technology for operation around 630 GHz. The ILO is based on LC cross-coupled topology with push-push structure for second harmonic extraction and fundamental signal suppression. The on-chip patch antenna is integrated to the output stage of the ILO for direct radiation into free space. The injection circuit is formed at the emitter stage of the ILO with transformer based passive balun for compact design. It will also suppress the loss that can be induced by an active circuit in the high-frequency band. The delivered output power in free-running condition is -7.6 dBm at 637.3 GHz. With an injection signal of 0 dBm at320 GHz, the delivered output power is 1 dBm at 640 GHz. Thetotal DC power consumption is 20.6 mW.