A 28-GHz CMOS Power Amplifier with Ribbon Cell

  • Younseok Han Hanbat National University
  • Seungchan Lee Chonnam National University
  • Dong-Ho Lee Hanbat National University
  • GwanghyeonJeong Hanbat National University
Keywords: 28GHz, AM-PM, CMOS, IMD3, PA

Abstract

In this paper, we present a CMOS power amplifier with ribbon cells. As the frequency increases, the output impedance decreases due to parasitic capacitors, so an int- erstage inductor is inserted. The interstage inductor used in previous research has the problem of increasing the size of the chip. Ribbon cells use larger interstage inductors through mutual inductance. Therefore, a metal smaller than the desired inductor metal size can be used. This allows the chip size to be designed small. It also improves AM-PM distortion and IMD3. Operating at 28GHz and with a supply voltage of 2.4V, IMD3 -40dBc is 10dBm of linear output power and -30dBc is 12.3dBm of linear output power. and PAE are 19% and 25%. It has a saturated output power of 18.4dBm and achieves a gain of 11.6dB at P1dB of 16.4dBm.

Author Biographies

Younseok Han, Hanbat National University

Younseok Han received the B.S degree in the department of information and communication engineering at Hannam University, Daejeon, South Korea, in 2024.

He is currently working toward the M.S degree in department of intelligent nano semiconductor engineering, Hanbat National University, Daejeon, South Korea. His current research interests include CMOS Power Amplifier for Ka-band And GaAs Power Amplifier for X-band

Seungchan Lee, Chonnam National University

Seungchan Lee received the B.S.,M.S., and Ph.D. degrees in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea,in 2015, 2017, and 2021, respectively.

He was a post-doctoral researcher at University of California Santa Barbara, Santa Barbara, CA, USA from 2021 to 2023. He was involved in various ICs and phased-array module development projects for 6G communication using GlobalFoundries RF-SOI and Intel16 FinFET processes. He is currently an Assistant Professor with the Department of Electronics Engineering, Chonnam National University, Gwangju, South Korea. His current research interests include millimeter-wave and Sub-THz integrated circuits and systems, and phased array systems for future wireless communications. Dr. Lee was a recipient/co-recipient of Grand Prize in the 25th Human-Tech Paper Award hosted by Samsung Electronics in 2019, a Minister Award of the Ministry of Science and ICT of Korea in 2020, and a Prime Minister Award of the Republic of Korea in the Korea Semiconductor Design Competition in 2020.

Dong-Ho Lee, Hanbat National University

Dong-Ho Lee received the B.S., M.S., and Ph.D. degrees in electrical engineering from the Korea Advanced Institute of Science and Technology, Daejeon, South Korea, in 2000, 2002, and 2007, respectively.

From 2007 to 2009, he was with the Microwaves Applications Group, Georgia Institute of Technology, Atlanta, GA, USA, where he developed complementary metal oxide semiconductor (CMOS) power amplifiers for mobile communications. In 2009, he joined Skyworks Solutions Inc., Cedar Rapids, IA, USA, where he was involved in the design of power amplifiers and front-end modules for cellular handsets. In 2010, he joined Hanbat National University, Daejeon, South Korea, as a faculty member. His research interests include RF power amplifiers, microwave modules, ultrasonic applications, and radar systems.

GwanghyeonJeong, Hanbat National University

Gwanghyeon Jeong Professor Jeong received B.S. and M. S. and the Ph.D degree in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 2012, 2014, and 2018, respectively.

He was with the Agency for Defense Development (ADD) from May 2018 to January 2021, and Hannam University from March 2021 to February 2023. He is now with the department of semiconductor system engineering, Hanbat National University, Daejeon, South Korea, as an assistant professor from March 2024. His research interests are RF circuits and systems for future wireless communications.

 

Homepage : https://sites.google.com/view/hbnu-rf

Published
2024-07-01
How to Cite
Han, Y., Lee, S., Lee, D.-H., & Jeong, G. (2024). A 28-GHz CMOS Power Amplifier with Ribbon Cell. Journal of Integrated Circuits and Systems, 10(3). https://doi.org/10.23075/jicas.2024.10.3.001
Section
Articles