Logic Operation Implementation Method with Single-Level Cell NAND Flash

  • Jihoon Ahn University of Seoul
  • Minkuk Koo Incheon National University
  • Yoon Kim University of Seoul
Keywords: processing-in-memory, memory, non-volatile memory, NAND flash, single-level cell NAND flash

Abstract

With the advent of the big data era, the memory wall has become a dominant issue in computer hardware design. To overcome the memory wall issue, processing-in-memory (PIM) technology has been actively researched with various types of memory devices including static random-access memory (SRAM), dynamic random-access memory (DRAM), resistive random-access memory (RRAM) and charge trap flash (CTF). However, a logic operation implementation methodology for single-level cell (SLC) NAND flash, has yet to be investigated. This paper proposes and validates a method for implementing logic operations on SLC NAND flash. The proposed logic operation implementation method was demonstrated by Sentaurus TCAD mixed-mode simulations.

Author Biographies

Jihoon Ahn, University of Seoul

JI-HOON AHN received the B.S. degree and M.S. degree in electrical and computer engineering from University of Seoul, Seoul, South Korea, in 2020 and 2022, respectively. He is currently pursuing a Ph.D. degree in electrical and computer engineering from University of Seoul, Seoul, South Korea.

Minkuk Koo, Incheon National University

MINSUK KOO received the B.S. degree in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST) in 2007, the M.S. degree in electrical engineering from Seoul National University in 2009, and the Ph. D degree in Electrical and Computer Engineering from Purdue University in 2020. From 2009 to 2012, he was a Senior Engineer with RadioPulse Inc., Seoul, South Korea, where he was involved in the development of ZigBee transceiver and SoC products. Since 2020, he has been with the Department of Computer Science and Engineering at Incheon National University.   His research interests are in the hw/sw co-design for neuromorphic computing system including neural networks.

Yoon Kim, University of Seoul

YOON KIM received the B.S. and Ph.D. degrees in electrical engineering from Seoul National University, Seoul, South Korea, in 2006 and 2012, respectively. From 2012 to 2015, he was a Senior Engineer with Samsung Electronics Company, South Korea. In 2015, he joined Pusan National University, Busan, South Korea, as an Assistant Professor. In 2018, he joined the University of Seoul and in 2020 became an Associate Professor.

Homepage URL : https://yoonkim82.wixsite.com/asdl

Published
2024-01-01
How to Cite
Ahn, J., Koo, M., & Kim, Y. (2024). Logic Operation Implementation Method with Single-Level Cell NAND Flash. Journal of Integrated Circuits and Systems, 10(1). https://doi.org/10.23075/jicas.2024.10.1.001
Section
Articles