Design of an H-band Frequency Tripler and Buffer Amplifier IC in 250-nm InP HBT Process

Hyung Eun Kim; Yeong Min Jang; Yeong Chae Jeon; Jin Ho Jeong

doi:10.23075/jicas.2022.8.4.008

Hyung Eun Kim Sogang University https://orcid.org/0000-0002-4259-0286
Yeong Min Jang Sogang University
Yeong Chae Jeon Sogang University https://orcid.org/0000-0002-9367-0657
Jin Ho Jeong Sogang University

DOI: https://doi.org/10.23075/jicas.2022.8.4.008

Keywords: Buffer Amplifier, H-band, Millimeter wave, Tripler

Abstract

In this paper, we propose the design of H-band(220-330 GHz) frequency tripler and buffer amplifier IC(Integrated Circuit) using 250-nm InP HBT technologies. H-band frequency tripler is designed by using triple-push technique and is composed of 3-way 120 power divider and coupled line. Simulated result of H-band tripler shows -3 dBm output power while measured result shows between -9 and -6 dBm output power. Spectrum result of H-band tripler is down-converted by H-band harmonic mixer but it shows H-band tripler operates well at H-band. To decrease buffer amplifier chip area, we use cascode method in buffer amplifier design. IC with H-band tripler and buffer shows 5.6 dBm output power and -3.6 dB conversion gain. Finally, to decrease performance degradation due to off-chip transition, we will design on-chip transition connecting waveguide and microstrip.

Author Biographies

Hyung Eun Kim, Sogang University

Hyung Eun Kim received the B.S. degree in electronic engineering from Sogang University, Seoul, South Korea, in 2020. He is currently working toward the Ph.D. degree in electronic engineering at Sogang University, Seoul. His research interest includes High speed circuits, oscillators, and THz integrated circuits.

Yeong Min Jang, Sogang University

Yeong Min Jang received the B.S. degree in electrical engineering from Donga University, Busan, South Korea, in 2020. He is currently working toward the Ph.D. degree in electronic engineering at Sogang University, Seoul. His research interest includes monolithic microwave integrated circuits, THz integrated circuits, and wireless power amplifier.

Yeong Chae Jeon, Sogang University

Yeong Chae Jeon received the B.S. degree in electrical engineering from Donga University, Busan, South Korea, in 2021. He is currently working toward the Ms. degree in electronic engineering at Sogang University, Seoul. His research interest includes THz integrated circuits module and packaging, millimeter wave passive circuit.

Jin Ho Jeong, Sogang University

Jin Ho Jeong received the B.S., M.S., and Ph.D. degrees in electrical engineering from Seoul National University, Seoul, South Korea, in 1997, 1999, and 2004, respectively. From 2004 to 2007, he was in the University of California at San Diego, La Jolla, CA, USA, as a Postdoctoral Scholar, where he was involved with the design of high efficiency and high-linearity RF power amplifiers. In 2007, he joined the Department of Electronics and Communications Engineering, Kwangwoon University, Seoul. Since 2010, he has been with the Department of Electronic Engineering, Sogang University, Seoul. His research interests include monolithic microwave integrated circuits, THz integrated circuits, high-efficiency/high-linearity power amplifiers and oscillators, and wireless power transfers

Homepage : https://rfdesign.sogang.ac.kr/rfdesign/index.html