A CMOS-Based Ultra-Wide Range Temperature Sensor for Quantum Computing Circuits in 65nm CMOS

Chanjung Park; Jiyoung Kim; Byungjae Kwag; Kunhee Cho

doi:10.23075/jicas.2025.11.3.003

Chanjung Park Sungkyunkwan University
Jiyoung Kim Sungkyunkwan University
Byungjae Kwag Independent Researcher, Seoul, South Korea
Kunhee Cho Sungkyunkwan University

DOI: https://doi.org/10.23075/jicas.2025.11.3.003

Keywords: CMOS, temperature sensor, cryogenic, relaxation-oscillator

Abstract

In this paper, an ultra-wide range CMOS temperature sensor is designed for applications in cryogenic and room temperature environments. A beta multiplier structure is employed as the sensing element to generate a temperature-proportional current. By leveraging the temperature coefficient (TC) of MOSFET mobility and resistor characteristics, the sensor ensures a stable TC. The generated current serves as the bias for a relaxation oscillator, which facilitates temperature-to-frequency conversion. The relaxation oscillator operates with a lower TC than the beta multiplier, with its frequency variation determined by the bias current. The resulting frequency is then digitized using a 16-bit counter. The sensor is designed to operate over a temperature range of -270°C to 30°C. Simulation results indicate that the oscillator produces 20.6 KHz at -250°C with a TC of 0.75 KHz/°C.

Author Biographies

Chanjung Park, Sungkyunkwan University

Chanjung Park received the B.S. and M.S. degrees in electronics engineering from Kyungpook National University, Daegu, South Korea, in 2022 and 2025, respectively. He is currently pursuing the Ph.D. degree at Sungkyunkwan University, Suwon, Republic of Korea. His research interests include power management ICs, DC–DC converters, AC-DC converters, and ultra-low power cryogenic circuits.

Jiyoung Kim, Sungkyunkwan University

Jiyoung Kim received the B.S. degree in electronics engineering from Kumoh National Institute of Technology, Korea, in 2022, and the M.S. degree in electronics engineering from Kyungpook National University, Daegu, South Korea, in 2024. She is currently an IC Design Engineer with Silicon Mitus, South Korea. Her research interests include power management ICs and high-voltage gate drivers.

Byungjae Kwag, Independent Researcher, Seoul, South Korea

Byungjae Kwag received the B.S. degree in electrical engineering from Hanyang University, Ansan, South Korea, in 2025. He is currently an independent researcher and is scheduled to begin an integrated M.S.-Ph.D. program at Sungkyunkwan University in Suwon, South Korea, in the latter half of 2025. His research interests include analog integrated circuit design for power management ICs.

Kunhee Cho, Sungkyunkwan University

Kunhee Cho received the B.S. and M.S. degrees in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 2007 and 2009, respectively, and the Ph.D. degree in electrical and computer engineering from the University of Texas at Austin, Austin, TX, USA, in 2016.

From 2009 to 2012, he was with Fairchild Semiconductor, Bucheon, South Korea, where he designed power management integrated circuits (ICs). In 2015 and 2016, he was a Graduate Research Intern with Texas Instruments Incorporated, Dallas, TX, USA, in the low-power RF team. From 2017 to 2020, he was with Qualcomm Technologies Incorporated, Santa Clara, CA, USA, where he designed power management ICs for battery charger systems. From 2020 to 2025, he was an Associate Professor with Kyungpook National University, Daegu, South Korea. In 2025, he joined Sungkyunkwan University, Suwon, South Korea. His research interests include power management ICs, high-voltage gate drivers, class-D amplifiers, and RF power amplifiers.

Dr. Cho was a recipient of the Texas Instruments Outstanding Student Design Award in 2013.

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