Peripheral System for Tunneling Field-Effect Transistor-Based Content Addressable Memory

  • Jinhyeok Kim University of Seoul
  • Minsuk Koo University of Seoul, IM electronics co
  • Yoon Kim University of Seoul, IM electronics co
Keywords: Content addressable memory, Searchline data register, Matchline sense amplifier, High voltage switch, Priority encoder

Abstract

Content Addressable Memory (CAM) is a crucial component in modern computing systems, offering rapid parallel search capabilities that significantly enhance data retrieval efficiency. CAM is increasingly employed in advanced applications such as Deep Neural Networks (DNNs), particularly within Memory-Augmented Neural Networks (MANNs) that utilize one-shot learning techniques. While CAMs can be implemented using various memory technologies such as SRAM, RRAM, and Ferroelectric FETs, this paper specifically addresses the challenges and solutions associated with TFET-based CAMs. We propose a system for TFET-based CAMs composed of four critical components: the Searchline Data Register, the Matchline Sense Amplifier, the High Voltage Switch, and the Priority Encoder. The functionality and performance of the proposed peripheral circuits have been validated through experimental testing, demonstrating the practical feasibility of integrating TFET-based CAMs into advanced circuit systems.

Author Biographies

Jinhyeok Kim, University of Seoul

JINHYEOK KIM received the B.S. degree in electrical and computer engineering from University of Seoul, Seoul, South Korea, in 2023. He is currently pursuing a M.S. degree in electrical and computer engineering from University of Seoul, Seoul, South Korea.

Minsuk Koo, University of Seoul, IM electronics co

Minsuk Koo received the B.S. degree in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST) in 2007, the M.S. degree in electrical engineering from Seoul National University in 2009, and the Ph. D degree in Electrical and Computer Engineering from Purdue University in 2020. From 2009 to 2012, he was a senior engineer with RadioPulse Inc., Seoul, South Korea, where he was involved in the development of ZigBee transceiver and SoC products. Since 2020, he has been with the Department of Computer Science and Engineering at Incheon National University. In 2024, he joined the University of Seoul and became an associate professor.

Yoon Kim, University of Seoul, IM electronics co

Yoon Kim received the B.S. and Ph.D. degrees in electrical engineering from Seoul National University, Seoul, South Korea, in 2006 and 2012, respectively. From 2012 to 2015, he was a senior engineer with Samsung Electronics company, South Korea. In 2015, he joined Pusan National University, Busan, South Korea, as an assistant professor. In 2018, he joined the University of Seoul, became an associate professor in 2020, and a professor in 2024.

Homepage : https://yoonkim82.wixsite.com/asdl

Published
2025-01-01
How to Cite
Kim, J., Koo, M., & Kim, Y. (2025). Peripheral System for Tunneling Field-Effect Transistor-Based Content Addressable Memory. Journal of Integrated Circuits and Systems, 11(1). https://doi.org/10.23075/jicas.2025.11.1.002
Section
Articles