Peripheral System for Tunneling Field-Effect Transistor-Based Content Addressable Memory
Abstract
Content Addressable Memory (CAM) is a crucial component in modern computing systems, offering rapid parallel search capabilities that significantly enhance data retrieval efficiency. CAM is increasingly employed in advanced applications such as Deep Neural Networks (DNNs), particularly within Memory-Augmented Neural Networks (MANNs) that utilize one-shot learning techniques. While CAMs can be implemented using various memory technologies such as SRAM, RRAM, and Ferroelectric FETs, this paper specifically addresses the challenges and solutions associated with TFET-based CAMs. We propose a system for TFET-based CAMs composed of four critical components: the Searchline Data Register, the Matchline Sense Amplifier, the High Voltage Switch, and the Priority Encoder. The functionality and performance of the proposed peripheral circuits have been validated through experimental testing, demonstrating the practical feasibility of integrating TFET-based CAMs into advanced circuit systems.