Design of H-Band Oscillator IC in 250-nm InP HBT Process

  • Jeongho Baek Sogang Univertisy
  • Yeongmin Jang Sogang University
  • Jinho Jeong Sogang University
Keywords: Efficiency, tuning range, voltage-controlled oscillator (VCO)

Abstract

In this paper, a voltage-controlled oscillator (VCO) operates at H-band (220-330 GHz) using 250-nm InP HBT technologies is presented. The VCO is designed with a Colpitts topology to oscillate at a fundamental frequency of 250 GHz. A common-base output buffer amplifier is implemented to minimize the load-pulling effect by isolating the oscillator core from the output load. The VCO is designed by using Agilent Advanced Design System (ADS) tools. Small and large signal analysis were implemented by ADS. The measured frequency tuning range of the VCO is 12.6 GHz (226.2-238.8 GHz). The maximum output power was measured at 230 GHz and recorded as 2.7 dBm. The dc power consumption is 32.2 mW, resulting in a dc-to-RF conversion efficiency of 5.2 %. The phase noise is -71.2 dBc/Hz at 10-MHz offset frequency.

Author Biographies

Jeongho Baek, Sogang Univertisy

Jeongho Baek received the B.S. degree in electrical engineering from Sogang University, Seoul, South Korea, in 2022, where he is currently pursuing the M.S. degree in electronic engineering. His research interests include RF circuits and linear RF transmitters for wireless communications.

Yeongmin Jang, Sogang University

Yeongmin Jang received the B.S. degree in electrical engineering from Donga University, Busan, South Korea, in 2020. He is currently working toward the Ph.D. degree in electronic engineering at Sogang University, Seoul. His research interests include monolithic microwave integrated circuits, THz integrated circuits, and wireless power amplifier.

Jinho Jeong, Sogang University

Jinho Jeong received the B.S., M.S., and Ph.D. degrees in electrical engineering from Seoul National University, Seoul, South Korea, in 1997, 1999, and 2004, respectively. From 2004 to 2007, he was at the University of California at San Diego, La Jolla, CA, USA, as a Postdoctoral Scholar, where he was involved with the design of high efficiency and high-linearity RF power amplifiers. In 2007, he joined the Department of Electronics and Communications Engineering, Kwangwoon University, Seoul. Since 2010, he has been with the Department of Electronic Engineering, Sogang University, Seoul. His research interests include monolithic microwave integrated circuits, THz integrated circuits, high-efficiency/high-linearity power amplifiers and oscillators, and wireless power transfer.

Homepage: http://rfdesign.sogang.ac.kr/

Published
2024-01-01
How to Cite
Baek, J., Jang, Y., & Jeong, J. (2024). Design of H-Band Oscillator IC in 250-nm InP HBT Process. Journal of Integrated Circuits and Systems, 10(1). https://doi.org/10.23075/jicas.2024.10.1.003
Section
Articles