A 10 Gbps Optical Receiver Analog Front-End  and MZM Driver in 65nm CMOS

Abdul Qahir; Sang Gug Lee

doi:10.23075/jicas.2023.9.2.003

Abdul Qahir Korea Advanced Institute of Science and Technology
Sang Gug Lee Korea Advanced Institute of Science and Technology

DOI: https://doi.org/10.23075/jicas.2023.9.2.003

Keywords: CMOS, Limiting Amplifier, Optical Modulator Driver, Optical Receiver, Trans-Impedance Amplifier(TIA)

Abstract

This paper presents a 10 Gbps optical receiver analog front end and a Mach-Zehnder Modulator (MZM) driver in the 65nm technology. The receiver consists of a Shunt Feedback TIA and a Limiting Amplifier with active feedback for bandwidth enhancement. Offset cancellation is also implemented in the feedback path to minimize random and systematic offsets. The modulator driver adopts a dual-stacked buffer topology with dynamic biasing to generate a high voltage swing. The measured trans-impedance gain of the receiver analog front-end is 74.31 dBΩ with a bandwidth of 16.87 GHz. The DC power consumption is 153 mW (including output buffer) with a supply voltage of 1.8 V. The total chip area of the receiver analog front-end is 0.605 mm². The modulator driver achieves a measured voltage swing of 2.02 V_p2p@ 10 Gbps and a simulated average dynamic power of 230 mW @ 10 Gbps with supply voltages of 1.1 and 2.2 V. The total chip area of the modulator driver is 0.434 mm².

Author Biographies

Abdul Qahir, Korea Advanced Institute of Science and Technology

Abdul Qahir received his B.S. degree in Electrical Engineering from National University of Sciences & Technology (NUST), Islamabad, Pakistan in 2017. Currently, he is enrolled in the M.S-Ph.D integrated program at Korea Advanced Institute of Science & Technology (KAIST). His current research interests include mmWave Circuit Design with a specific focus on voltage-controlled oscillators and phase-locked loops. Previously, he has also worked on analog front-end design of optical transceivers including high bandwidth amplifiers, trans-impedance amplifiers etc.

Sang Gug Lee, Korea Advanced Institute of Science and Technology

Sang-Gug Lee received his B.S. degree in electronic engineering from Kyungpook National University, Daegu, South Korea, in 1981, and the M.S. and Ph.D. degrees in electrical engineering from the University of Florida, Gainesville, FL, USA, in 1989 and 1992, respectively. In 1992, he joined Harris Semiconductor, Melbourne, FL, USA, where he was involved in silicon-based radio frequency (RF) integrated circuit designs. From 1995 to 1998, he was an Assistant Professor with the School of Computer and Electrical Engineering, Handong University, Pohang, South Korea. From 1998 to 2009, he was a Professor with the Information and Communications University, Daejeon, South Korea. Since 2009, he has been a Professor with the Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon. He served as the Research Director for the Auto-ID Laboratory KAIST, from 2005 to 2010. In 2007, his laboratory was selected as a National Research Laboratory. Since 2012, he has been serving as the Director for the Future Promising Fusion Technology Pioneer Center, leading a research group in silicon-technology-based terahertz integrated circuit (IC) design. His current research interests include CMOS-based radio frequency (RF), analog, and mixed-mode IC designs for various radio transceiver applications, low-power transceivers, extreme high-frequency (terahertz) circuit design based on CMOS technology, and other analog integrated circuit designs such as display semiconductors, power management ICs, and automotive ICs. He has also served as a Technical Committee member for IEEE ISSCC of the Wireless Communication Technology Committee from 2005 to 2009.

Homepage : http://nice.kaist.ac.kr/

A 10 Gbps Optical Receiver Analog Front-End and MZM Driver in 65nm CMOS

Abstract

Author Biographies

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