Analysis of Millimeter-Wave Power Amplifier Using Cascode structure

Deok Young Kim

doi:10.23075/jicas.2022.8.4.004

Deok Young Kim Yonsei university

DOI: https://doi.org/10.23075/jicas.2022.8.4.004

Keywords: Cascode, Millimeter-wave, Parasitic, Power amplifier

Abstract

This paper illustrates a power amplifier design methodology used in the millimeter-wave and analyzes design issues at millimeter-wave band. The designed millimeter-wave band power amplifier is implemented in 3 stages cascade. The power amplifier consists of a drive stage using cascode and power stage to which neutralization technique is applied. we analyze how to verify the parasitic effects in the millimeter-wave band on the cascode structure of the drive stage through pre-layout and post layout simulation. The power amplifier of the millimeter-wave band was designed using the Samsung 28nm process. The simulation result of the designed power amplifier shows the saturation output power is 7 dBm and the PAE is 6.5%. In the simulation, S21 is 16.8 dB. Designed with 1 V supply, the power amplifier consumes 62 mW of DC power.

Author Biography

Deok Young Kim, Yonsei university

Deok Young Kim received the B.S. degrees in electrical and electronics engineering from Kangwon National University, Chuncheon, Korea, in 2019, where he is currently working toward the M.S. degree in electrical and electronics engineering from Yonsei University, Seoul, Korea. His research interest includes mm-wave PA and GaN amplifier.