A 6Gb/s Transceiver Design with Phase-Difference Modulation Signaling for Multi-drop DRAM Interface

Keywords: Inter-symbol interference, Multi-drop memory interface, Phase difference modulation signaling

Abstract

In this paper, we designed the phase-difference modulation (PDM) transceiver for the application of PDM signaling in the multi-drop DRAM interface. Because PDM signaling reduced the effect of the reflected signal by positioning the reflected signal between the clock edges, In addition, PDM transceiver did not increase the hardware cost because it does not demand DFE and FFE circuits. With PDM signaling, we implemented the two amplifiers, which make the design complexity of the clock recovery circuit simple: the clock recovery circuit is a simple interpolator. The proposed PDM transceiver was fabricated in 65 nm CMOS technology and verified the performance by simulations. To verify the performance of the PDM signaling, we compared the simulated 6 Gb/s eye diagram in the multi-drop channel with the NRZ signaling. The simulated vertical and horizontal eye sizes in PDM signaling were increased to 60.5 mV and 63.7 ps, respectively; but the simulated eye was closed in NRZ signaling. Therefore, with PDM signaling, the multi-drop memory interfaces with high capacity are feasible without increasing the power and hardware cost.

Author Biographies

Chang Yoon Han, Pohang University of Science and Technology

Chang Yoon Han (S’20) received the B. S. degrees in Electrical Engineering from Pohang University of Science and Technology (POSTECH), Pohang, Korea, in 2020. He is currently pursuing the M.S. degree in the Department of Electrical Engineering from POSTECH, Pohang. Korea. His interests include high-speed low power links, signal/ power integrity, and interconnect modeling.

Jae Young Seo, Pohang University of Science and Technology

Jae Young Seo (S’15) received the B.S. and M.S. degrees in Electrical Engineering from Pohang University of Science and Technology (POSTECH), Pohang, Korea, in 2015 and 2017, respectively. He is currently pursuing the Ph.D. degree in the Department of Electrical Engineering from POSTECH, Pohang. Korea. His interests include high-speed low power links, signal/power integrity, and interconnect modeling.

Byung Sub Kim, Pohang University of Science and Technology

Byung Sub Kim (M’11-SM’16) received the B.S. degree in electrical engineering from the Pohang University of Science and Technology (POSTECH), Pohang, Korea, in 2000, and the M.S. and Ph.D. degrees in electrical engineering and computer science from Massachusetts Institute of Technology (MIT), Cambridge, MA, USA, in 2004 and 2010, respectively.

Dr. Kim received several honorable awards. He was a recipient of the IEEE Journal of Solid-State Circuits Best Paper Award, in 2009, the Analog Device Inc., and the Outstanding Student Designer Award from MIT, in 2009. He was a corecipient of the Beatrice Winner Award for Editorial Excellence at the 2009 IEEE International Solid-State Circuits Conference. For several years, he served or has been serving as the Technical Program Committee Member of the IEEE International Solid-State Circuits Conference and the IEEE Asian Solid-State Circuit Conference.

homepage : https://bevillab.postech.ac.kr/

Published
2022-06-30
How to Cite
Han, C. Y., Seo, J. Y., & Kim, B. S. (2022). A 6Gb/s Transceiver Design with Phase-Difference Modulation Signaling for Multi-drop DRAM Interface. Journal of Integrated Circuits and Systems, 8(3), 6-10. https://doi.org/10.23075/jicas.2022.8.3.002
Section
Articles